Gallium nitride electronics: Watt is the limit? [summary of GaN semiconductor devices]

Abstract

This work presents a summary of the use of gallium nitride and its alloys in the development of semiconductor devices. It begins with a description of the HEMT and its use in microwave and power switching applications. Then follows a brief examination of MOSHFETs, MISHFETs and MISFETs. HBTs are discussed, along with the problems of poor electronic properties of p-type GaN and leakage through p-n junctions and etched surfaces. The paper concludes by referring to the POLFET which is based on modulating a 3D electron slab created by grading the polarization in the system, resulting in a MESFET with no doping.