Simulation of parasitic effects on Silicon Carbide devices for automotive electric traction

F. Pellitteri, M. Caruso, R. Miceli, Dario Benigno, S. Stivala, A. Busacca, V. Vinciguerra, A. Messina, Alessandra Raffa
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引用次数: 1

Abstract

Wide Band Gap (WBG) semiconductors are increasingly addressed towards Electric Vehicle (EV) applications, due to their significant advantages in terms of high-voltage and low-losses performances, suitable for high power applications. Nevertheless, the packaging in WBG devices represents a challenge for designers due to the notable impact that inductive and capacitive parasitic components can bring in high switching frequency regime in terms of noise and power losses. In this paper, a comparison between conventional Silicon (Si) and emerging Silicon-Carbide (SiC) power switching devices is presented. The effects of inductive parasitic effects and switching frequency are investigated in simulation on a typical switching circuit and power losses are compared as well. Experimental results concerning a SiC-based circuit are shown and investigated in a preliminary printed circuit board (PCB).
汽车电力牵引用碳化硅装置的寄生效应模拟
宽带隙(WBG)半导体由于其在高电压和低损耗性能方面的显著优势,越来越多地用于电动汽车(EV)应用,适合于高功率应用。然而,WBG器件的封装对设计人员来说是一个挑战,因为电感和电容寄生元件在噪声和功率损耗方面会带来高开关频率的显著影响。本文对传统硅(Si)和新兴碳化硅(SiC)功率开关器件进行了比较。在一个典型的开关电路上进行了仿真,研究了电感寄生效应和开关频率的影响,并比较了功率损耗。在初步的印刷电路板(PCB)上展示和研究了基于sic的电路的实验结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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