Arsenic atomic layer doping in Si using AsH3

2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) Pub Date : 2014-06-02 DOI:10.1109/ISTDM.2014.6874638

Y. Yamamoto, R. Kurps, Juichi Murota, B. Tillack

引用次数: 3

Abstract

Results of arsenic atomic layer doping in Si (100) are presented in this study. Arsenic adsorption and segregation behavior on the Si(100) surface are also discussed. SIMS and four-point probe methods are used for As profile and dosage measurements.

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用AsH3掺杂硅中的砷原子层

本文报道了砷原子层在硅(100)中掺杂的结果。还讨论了砷在Si(100)表面的吸附和偏析行为。SIMS和四点探针法用于砷剖面和剂量测量。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)

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