Temperature effect on a-SiCN:H waveguide for application of sensing

C. Mishra, G. Palai
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Abstract

In this article, Effect of temperature on a-SiCN:H waveguide is comprehensively discussed. Both absorption and reflection losses of a-SiCN:H waveguide are considered to determine the transmitted energy at wavelength of 632 nm. Transmittance from such construction is simulated using plane wave expansion technique. Simulation output is exposed that transmittance varies linearly with respect to the temperature. It is also observed that absorption of a-SiCN:H is negligible at the wavelength 632 nm. Experimental set up is proposed to compute transmitted energy coming from the same waveguide with respect to various temperatures. Ultimately simulation outcome showed that transmitted energy of such construction varies outstandingly, which is a good temperature sensor
温度效应对a-SiCN:H波导传感应用的影响
本文全面讨论了温度对a-SiCN:H波导的影响。考虑了a-SiCN:H波导的吸收损耗和反射损耗,确定了632nm波长处的透射能量。利用平面波展开技术模拟了这种结构的透光率。模拟结果表明,透光率随温度呈线性变化。在波长632 nm处,a-SiCN:H的吸收可以忽略不计。提出了一种计算不同温度下同一波导传输能量的实验装置。最终仿真结果表明,这种结构的传输能量变化明显,是一种很好的温度传感器
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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