Active Si interposer for 3D IC integrations

Joungho Kim
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引用次数: 13

Abstract

3D IC is becoming the most promising solution for the future low power, high bandwidth, and small size semiconductor systems including computer, mobile, and network systems. In the 3D IC, Si interposer can effectively serve as the high density and high bandwidth interconnections between the chips on the interposers. Si interposer for HBM (High-bandwidth Memory Module) is an example. In this paper, we propose a new novel interposer structure which is called as “Active interposer.” In the proposed active interposer scheme, passive devices and active circuits are integrated together to enhance the signal integrity, and power integrity, and to lower power consumptions. The actives circuits in the Si interposer include equalizer, clock distribution network as well as DC-DC converter circuit. Also, wireless power delivery network can be added to reduce the number and space of P/G balls and vias.
用于3D集成电路的有源硅中间体
3D集成电路正在成为未来低功耗、高带宽和小尺寸半导体系统(包括计算机、移动和网络系统)最有前途的解决方案。在三维集成电路中,硅中间层可以有效地充当中间层上芯片之间的高密度、高带宽互连。HBM (High-bandwidth Memory Module)的Si interposer就是一个例子。本文提出了一种新的中间位结构,称为“有源中间位”。在提出的有源中介器方案中,将无源器件和有源电路集成在一起,提高了信号完整性和功率完整性,降低了功耗。硅中间器的有源电路包括均衡器、时钟分配网络和DC-DC转换电路。此外,可以增加无线电力输送网络,以减少P/G球和过孔的数量和空间。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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