Growth and crystalline properties of Ge1−x−ySnxCy ternary alloy thin films on Ge(001) substrate

Abstract

We achieved the world's first epitaxial growth of a Ge_1-x-ySn_xC_y layer, and investigated the effect of Sn incorporation on the growth of Ge_1-xC_x. Sn incorporation can decrease the epitaxial temperature of Ge_1-xC_x layer. Also, Sn incorporation can make C atoms stable at the substitutional site. This Ge_1-x-ySn_xC_y layer is expected to realize the energy band engineering independently on the lattice parameter and promises to extend the potential of group-IV semiconductor materials for nanoelectronics and optoelectronic applications.