1.55-μm Dilute Nitride SOAs with low temperature sensitivity for coolerless on-chip operation

2015 IEEE International Conference on Electronics, Circuits, and Systems (ICECS) Pub Date : 2015-12-01 DOI:10.1109/ICECS.2015.7440407

G. Giannoulis, N. Iliadis, D. Apostolopoulos, P. Bakopoulos, H. Avramopoulos, V. Korpijarvi, Jaakko Makela, J. Viheriala, M. Guina

引用次数: 1

Abstract

The temperature dependence of GaAs and InP SOA materials is investigated experimentally in this work. The direct comparison study verified that Dilute Nitrides are less temperature sensitive showing enhanced thermal stability on ASE spectrum and gain measurements in CW mode. Wavelength Conversion experiment at 10 Gb/s verified that GaAs SOA keeps up with the fast gain dynamics and the proper data processing at elevated temperatures while the performance of InP material is drastically degraded by heating the SOA device.

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1.55 μm稀氮化soa具有低温敏感性，用于无冷却器片上操作

实验研究了GaAs和InP SOA材料的温度依赖性。直接对比研究证实，在连续波模式下，稀氮化物具有较低的温度敏感性，在ASE光谱和增益测量中表现出更强的热稳定性。10gb /s的波长转换实验验证了GaAs SOA在高温下保持了快速的增益动态和正确的数据处理，而InP材料的SOA器件由于加热而性能急剧下降。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2015 IEEE International Conference on Electronics, Circuits, and Systems (ICECS)

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