Impact of short-channel effects on velocity overshoot in MOSFET

Abstract

In this work, the impact of short-channel effects on velocity overshoot is discussed. Hydrodynamic simulations are first performed to investigate the overshoot behavior under a uniform electric field. Then a spatially varying electric field, which corresponds to the electric field profile in a MOSFET in inversion, is introduced to observe the impact of short-channel effects on velocity overshoot. Finally, SPICE simulations of a ring-oscillator are used to analyze how the combined influence of overshoot and short-channel effects affect the performance of downscaled CMOS technology.