A low voltage CMOS voltage reference based on partial compensation of MOSFET threshold voltage and mobility using current subtraction

L. Toledo, P. Petrashin, W. Lancioni, F. Dualibe, Luis Rafael Canali
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引用次数: 5

Abstract

A novel scheme for a CMOS low-voltage reference is proposed. It uses current subtraction between the currents generated by two instances of the same current generator circuit, each one configured with different magnitude and temperature coefficients. Temperature stability is achieved owing to the partial compensation of the MOSFET threshold voltage and mobility temperature effects. For a nominal reference voltage of 436.5 mV, SPICE simulation reveals a ±38.2 ppm/°C temperature coefficient within the range of -20 °C to 100°C.
基于MOSFET阈值电压部分补偿和电流减法迁移率的低压CMOS电压基准
提出了一种新的CMOS低压基准电路设计方案。它使用由两个相同的电流发生器电路产生的电流之间的电流减法,每个电路配置不同的幅度和温度系数。由于MOSFET阈值电压和迁移率温度效应的部分补偿,温度稳定性得以实现。对于436.5 mV的标称参考电压,SPICE仿真显示在-20°C至100°C范围内的温度系数为±38.2 ppm/°C。
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