L. Toledo, P. Petrashin, W. Lancioni, F. Dualibe, Luis Rafael Canali
{"title":"A low voltage CMOS voltage reference based on partial compensation of MOSFET threshold voltage and mobility using current subtraction","authors":"L. Toledo, P. Petrashin, W. Lancioni, F. Dualibe, Luis Rafael Canali","doi":"10.1109/LASCAS.2013.6519024","DOIUrl":null,"url":null,"abstract":"A novel scheme for a CMOS low-voltage reference is proposed. It uses current subtraction between the currents generated by two instances of the same current generator circuit, each one configured with different magnitude and temperature coefficients. Temperature stability is achieved owing to the partial compensation of the MOSFET threshold voltage and mobility temperature effects. For a nominal reference voltage of 436.5 mV, SPICE simulation reveals a ±38.2 ppm/°C temperature coefficient within the range of -20 °C to 100°C.","PeriodicalId":190693,"journal":{"name":"2013 IEEE 4th Latin American Symposium on Circuits and Systems (LASCAS)","volume":"79 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE 4th Latin American Symposium on Circuits and Systems (LASCAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LASCAS.2013.6519024","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
A novel scheme for a CMOS low-voltage reference is proposed. It uses current subtraction between the currents generated by two instances of the same current generator circuit, each one configured with different magnitude and temperature coefficients. Temperature stability is achieved owing to the partial compensation of the MOSFET threshold voltage and mobility temperature effects. For a nominal reference voltage of 436.5 mV, SPICE simulation reveals a ±38.2 ppm/°C temperature coefficient within the range of -20 °C to 100°C.