Single-chip condenser microphone using porous silicon as sacrificial layer for the air gap

W. Kronast, B. Muller, W. Siedel, Stoffel, Fachhochschule Furtwangen
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引用次数: 76

Abstract

A single-chip IC-compatible silicon condenser microphone with a highly sensitive silicon nitride membrane and a rigid monocrystalline silicon counterelectrode with acoustic holes was designed and built. Porous silicon with its high dissolution rate in 1% KOH was used as an auxiliary sacrificial layer in combination with sputtered SiO/sub 2/ to define the air gap. This results in low parasitic capacitances and a microphone structure where the membrane is coplanar with its suspensions. The rigid backelectrode is undistorted, the membrane under low tensile stress, a prerequisite for high sensitivity. Microphones of different dimensions of round and square electrodes with single membranes and membrane arrays were built and packaged in round chip carriers. The open loop sensitivity is in the mV/Pa range depending on the type of microphone. The frequency response goes beyond 25 kHz for an air gap of 1.3 /spl mu/m.
单片电容传声器采用多孔硅作为气隙牺牲层
设计并制造了一种具有高灵敏度氮化硅膜和带声孔的刚性单晶硅对电极的单片集成电路兼容的硅电容传声器。采用在1% KOH中溶解率高的多孔硅作为辅助牺牲层,与溅射SiO/sub 2/相结合来限定气隙。这导致了低寄生电容和传声器结构,其中膜与其悬浮液共面。刚性背电极不变形,薄膜承受低拉伸应力,这是高灵敏度的先决条件。制作了圆形和方形电极、单膜和膜阵列的不同尺寸麦克风,并将其封装在圆形芯片载体中。开环灵敏度在mV/Pa范围内,具体取决于麦克风的类型。当气隙为1.3 /spl mu/m时,频率响应超过25 kHz。
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