Review on simulation of filamentary switching in binary metal oxide based RRAM devices

Abstract

To explain the observed device characteristics of binary metal oxide based resistive random access memory (RRAM) modules, filamentary models have been proposed. Ab initio methods were applied to study conductive filamentary structures characteristic to the “ON” state and the atomistic description of the rupturing/dissolution process into the “OFF” state. We review the implications on the electronic structure and energetics of conductive filament channels formation and discuss the interplay between the ionic and electronic transport mechanisms.