110GHz high performanced varistor tripler

The 2012 International Workshop on Microwave and Millimeter Wave Circuits and System Technology Pub Date : 2012-04-19 DOI:10.1109/MMWCST.2012.6238180

Bo Zhang, Yong Fan, S. Zhang, X. Yang, F. Zhong, Zhe Chen

引用次数: 8

Abstract

A 110GHz Schottky diode frequency tripler made with four barrier diodes by two DBES105a diodes from United Monolithic Semiconductor (UMS) company is presented. The circuit is design on a suspended quartz. The whole frequency tripler circuit is optimized by harmonic balance analysis simulator of ADS. The measured multiplication output power reaches 5mW and the efficiency is nearly 3% from 106GHz to 114GHz.

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110GHz高性能压敏电阻三倍器

介绍了一种采用联合单片半导体(UMS)公司的2个DBES105a二极管，由4个势垒二极管组成的110GHz肖特基二极管三倍频器。电路设计在悬浮石英上。通过ADS谐波平衡分析模拟器对整个三倍器电路进行了优化，在106GHz ~ 114GHz范围内，倍增输出功率达到5mW，效率接近3%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

The 2012 International Workshop on Microwave and Millimeter Wave Circuits and System Technology

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