A 27.7dBm OIP3 SiGe HBT cascode LNA using IM3 cancellation technique

IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2006 Pub Date : 2006-06-11 DOI:10.1109/RFIC.2006.1651109

Sungmin Ock, Seokyong Hong, Sangwoo Han, Joonsuk Lee

引用次数: 2

Abstract

A 1.9GHz low noise amplifier(LNA) is implemented with SiGe BiCMOS process using a modified cascode structure. In order to achieve high linearity and low NF at the same time, the phase of IM3 (3rd order inter-modulation) in a common emitter amplifier is derived and the new IM3 cancellation method is proposed. The measurement results of the LNA at 1930MHz are gain of 16.9dB, noise figure of 1.5dB, and OIP3 of 27.7dBm with a single 2.7V supply. It consumes only 4.4mA

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采用IM3对消技术的27.7dBm OIP3 SiGe HBT级联码LNA

采用改进的级联码结构，采用SiGe BiCMOS工艺实现了一种1.9GHz低噪声放大器。为了同时实现高线性度和低NF，推导了共发射极放大器中IM3(三阶互调)的相位，提出了一种新的IM3对消方法。在单路2.7V电源下，1930MHz时LNA的增益为16.9dB，噪声系数为1.5dB, OIP3为27.7dBm。它只消耗4.4mA

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2006

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