Design and simulation of a wideband CMOS transconductance amplifier

Proceedings of the Sixteenth National Radio Science Conference. NRSC'99 (IEEE Cat. No.99EX249) Pub Date : 1999-02-23 DOI:10.1109/NRSC.1999.760934

M. Elazab

引用次数: 0

Abstract

A CMOS wideband transconductance amplifier has been designed in 1.2 /spl mu/m technology. The output current driving capabilities as well as the frequency response have been simulated using Monte Carlo analysis in order to investigate the effect of dispersion in process parameters. The control over the amplifier bandwidth is obtained by adequate design of the main biasing current. Finally, the transfer characteristic curve nonlinearity is also studied.

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宽带CMOS跨导放大器的设计与仿真

设计了一种1.2 /spl mu/m工艺的CMOS宽带跨导放大器。为了研究工艺参数中色散的影响，利用蒙特卡罗分析方法对输出电流驱动能力和频率响应进行了模拟。对放大器带宽的控制是通过适当设计主偏置电流来实现的。最后，对传递特性曲线的非线性进行了研究。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of the Sixteenth National Radio Science Conference. NRSC'99 (IEEE Cat. No.99EX249)

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