A fast and low-voltage Cu complementary-atom-switch 1Mb array with high-temperature retention

Abstract

Fast (10ns) and low voltage (2V) programming of Cu atom switch has been demonstrated in a 1Mb switch array for the first time. A newly developed redox-control buffer of Al_0.5Ti_0.5O_x leads to extremely steep slope switching of voltage dependent time-to-ON-state (56mV/decade), by eliminating metallic Al residues at the Cu surface. The programmed ON-state shows long lifetimes both under data-retention test at 260°C and DC stress test (I_max=140μA) at 125°C. A redox-control technology is indispensable for conducting bridges used in a low-power, nonvolatile programmable logic (NPL).