Epitaxial growth and crystalline properties of Ge1−x−ySixSny layers on Ge(001) substrates

Abstract

We investigated the crystalline structure of Ge_1-x-ySi_xSn_y layers epitaxially grown on Ge(001) substrates. The unstrained and compressive strained Ge_1-x-ySi_xSn_y layers with very flat surface and high crystallinity can be grown. We found that the control of the strain direction is important to form a high quality Ge_1-x-ySi_xSn_y layer even with small misfit strain.