Establishment of Highly Dense Wire Bonding with Insulated Au Wire

N. Jaafar, C. Choong
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引用次数: 1

Abstract

The most popular first - level interconnection technologies used for the connection of chip to chip and chip to substrate are Wire Bonding and Flip Chip. As the semiconductor packaging requirement leading toward the finer pitch, higher pin count, multi -stack devices, there is an increase in the challenges for wire bonding process. With increase number of bond pads, wire bonding on multi -stack devices platform which lead to complex design of the layout that causes wire to cross, bundle and touch each other after molding process due to wire sweep effect, insulated bonding wire, X-Wire™ was introduced. X-Wire™ Technology is a patented nano-scale thin film dielectric coating that is applied onto the bare wire via proprietary application process. This coating provides a level of electrical insulation that permits bonding wires to cross and contact within electronic devices without risk of short-circuiting. In this studies, selection of capillary and parameters optimization of the FAB size, ball size range of 39µm+/-5 µm will be achieved with bond pad size 50µm by 50µm using the 0.7mils X-Wire™. The wire bonder used for this evaluation and study is ASM Extreme Eagle. Dage Bond Tester Series 4000 will be used to collect the ball shear and wire pull measurement. Failure mode will be analyse using high power scope and SEM and results will be shared in the full paper.
高密度金属丝与绝缘金线结合的建立
用于连接芯片到芯片和芯片到衬底的最流行的一级互连技术是线键合和倒装芯片。随着半导体封装要求向更细的间距、更高的引脚数、多堆叠器件发展,线键合工艺的挑战也在增加。随着焊盘数量的增加,多堆叠器件平台上的焊线在成型后由于导线扫线效应导致导线交叉、缠绕、接触,导致布线设计复杂,介绍了绝缘焊线X-Wire™。X-Wire™技术是一种获得专利的纳米级薄膜介质涂层,通过专有的应用工艺应用于裸线上。这种涂层提供了一定程度的电气绝缘,允许电子设备内的键合线交叉和接触而不会有短路的风险。在本研究中,毛细管的选择和FAB尺寸的参数优化,使用0.7mils X-Wire™,结合垫尺寸为50 μ m × 50 μ m,将实现39 μ m+/-5 μ m的球尺寸范围。用于本次评估和研究的金属丝焊机是ASM Extreme Eagle。Dage粘接测试仪系列4000将用于收集球剪切和线拉力测量。失效模式将使用大功率示波器和扫描电镜进行分析,结果将在全文中分享。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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