UWB transmitter for communication and localization for IEEE 802.15.4a standard

D. Martynenko, G. Fischer, O. Klymenko
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引用次数: 7

Abstract

This paper describes a monolithic integrated transmitter intended for impulse-radio (IR) Ultra-wide Band (UWB) applications compliant to the IEEE 802.15.4a standard. The transmitter operates in the higher UWB band on the communication channels #5, #6, #8 and mandatory channel #9. The impulse generation is based on the gated oscillator principle allowing required on-off keying (OOK) as well as binary phase shift keying (BPSK) with the pulse repetition frequency up to 499.2 MHz. The transmitter key components are optimized for the low power operation. The frequency synthesizer includes the novel low-power load-independent voltage controlled oscillator with a resonator isolated from the external load. Additionally, the programmable frequency divider based on the novel fast low-power triple-modulus prescalers is implemented. The triple- modulus prescaler realizes three modes (N/N±1) via the phase switching between the output signals of the master/slave ECL divide-by-two stage. In addition, the 50% duty cycle baseband clock of 499.2 MHz is derived from the divider chain, regardless of the chosen channel. Each functional transmitter block includes a “power down” switch for power efficient operation. Besides the communication, the time-of-arrival unit is implemented. It supports precise indoor localization in conjunction with an appropriate UWB receiver. The presented transmitter was fabricated in a 0.25 μm SiGe:C BiCMOS technology occupying a Si area of 1.85 × 1.85 mm2.
用于通信和定位的UWB发射机符合IEEE 802.15.a标准
本文描述了一种单片集成发射机,用于符合IEEE 802.15.a标准的脉冲无线电(IR)超宽带(UWB)应用。发射机在通信信道#5、#6、#8和强制信道#9上的较高UWB频段工作。脉冲产生基于门控振荡器原理,允许所需的开关键控(OOK)以及二进制相移键控(BPSK),脉冲重复频率高达499.2 MHz。发射机关键部件针对低功耗运行进行了优化。频率合成器包括新颖的低功率负载无关压控振荡器,谐振器与外部负载隔离。此外,还实现了基于新型快速低功耗三模预分频器的可编程分频器。三模预分频器通过主/从ECL输出信号的相位切换实现三种模式(N/N±1)。此外,499.2 MHz的50%占空比基带时钟来自分频器链,无论所选信道如何。每个功能发射机块包括一个“电源关闭”开关,用于节能操作。除了通信之外,还实现了到达时间单元。它支持精确的室内定位,并配合适当的超宽带接收器。该发射机采用0.25 μm SiGe:C BiCMOS工艺制作,其Si面积为1.85 × 1.85 mm2。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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