35nm InP HEMT LNAs at E/W-Band Frequencies

Abstract

This paper presents the design and performance of two millimeter-wave LNAs using 35nm InP HEMT device technology. First, a single-ended 3-stage LNA, operating over the 81-86 GHz band, is reported with a noise figure (NF) of 1.6-1.9 dB and a gain of 28 ±1 dB. This is the lowest reported noise figure for LNAs at this frequency. Secondly, a balanced LNA, operating over the 56- 110 GHz band, is reported with a NF of typically 2.7 dB and a gain of greater than 20 dB. This amplifier represents an unprecedented combination of low noise, good input/output match, and broad bandwidth.