Advanced high current, high reliable IGBT module with improved multi-chip structure

Abstract

Advanced IGBT module technology to realize high reliability and high current capability was presented. The 60,000 cycles long term power cycle capability of the low thermal expansion base module was demonstrated. A stress release tall mounting structure and a ceramic metal pull back structure were shown to be essential for high thermal cycle capability. A multi-end main terminal with multichip substrate and high resistivity sense emitter terminal technology was applied to realize high current capability and uniformity in the large high power module.