F. Stubenrauch, N. Seliger, M. Schustek, A. Lebedev, D. Schmitt-Landsiedel
{"title":"A 13.56MHz class e power amplifier for inductively coupled DC supply with 95% power added efficiency (PAE)","authors":"F. Stubenrauch, N. Seliger, M. Schustek, A. Lebedev, D. Schmitt-Landsiedel","doi":"10.1109/EURFID.2015.7332390","DOIUrl":null,"url":null,"abstract":"Recent development of GaN power transistors with blocking voltages up to 650V enables novel power electronics applications with outstanding performance in high-frequency operation. This paper demonstrates a class E power amplifier with 13.56MHz switching frequency for inductively coupled DC power supplies. Continuous wave output power up to 200W is achieved with 95% Power Added Efficiency (PAE).","PeriodicalId":205916,"journal":{"name":"2015 International EURASIP Workshop on RFID Technology (EURFID)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-11-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 International EURASIP Workshop on RFID Technology (EURFID)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EURFID.2015.7332390","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Recent development of GaN power transistors with blocking voltages up to 650V enables novel power electronics applications with outstanding performance in high-frequency operation. This paper demonstrates a class E power amplifier with 13.56MHz switching frequency for inductively coupled DC power supplies. Continuous wave output power up to 200W is achieved with 95% Power Added Efficiency (PAE).