{"title":"A 0.148nJ/conversion 65nm SOTB temperature sensor LSI using thermistor-defined current source","authors":"Shinya Nii, K. Ishibashi","doi":"10.1109/S3S.2017.8309211","DOIUrl":null,"url":null,"abstract":"This paper presents an ambient temperature sensor LSI utilizing a thermistor which defines the current of the CCO (current controlled oscillator) on 65nm SOTB process. The temperature sensor measures the ambient temperature with the power consumption of 531nW and 0.148nJ/conversion. This occupies an area of 5863μm<sup>2</sup>. The measurement temperature range was from −50 ° C to 50 ° C, and the resolution was 0.04 ° C.","PeriodicalId":333587,"journal":{"name":"2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/S3S.2017.8309211","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This paper presents an ambient temperature sensor LSI utilizing a thermistor which defines the current of the CCO (current controlled oscillator) on 65nm SOTB process. The temperature sensor measures the ambient temperature with the power consumption of 531nW and 0.148nJ/conversion. This occupies an area of 5863μm2. The measurement temperature range was from −50 ° C to 50 ° C, and the resolution was 0.04 ° C.