Multiphysics modeling and simulation of ultra-thin channel Germanium on insulator (GeOI) MOSFETs

Abstract

Multi-physical study of self-heating effect in GeOI MOSFET with 4nm channel thickness and 300nm channel length for digital integrated circuit is carried out by using finite element algorithm to solve carrier transport equations, Poisson equation, current continuity equations and thermal conduction equation. The simulated J-V curve is obtained by solving diffusive carrier transport equations. The time-dependent thermal conduction equation is solved to get the transient temperature response of the GeOI MOSFET. Due to the small size of the simulated structure, temperature response is in the scale of nanosecond according to our simulation results.