Optimization of high-voltage RF power SiGe transistors for cellular applications [HBTs]

Abstract

The base profile design for high-voltage RF power silicon transistors with epitaxial SiGe base was studied using 2-D process and device simulations. The addition of Ge in the base makes thin base widths with very high base doping possible. This gives rise to a higher maximum oscillation frequency thus improving the critical power gain for these devices.