K. Shao, S. Chu, K. Chew, Guan-Ping Wu, C. Ng, N. Tan, B. Shen, A. Yin, Zhe Zheng
{"title":"A scaleable metal-insulator-metal capacitors process for 0.35 to 0.18 /spl mu/m analog and RFCMOS","authors":"K. Shao, S. Chu, K. Chew, Guan-Ping Wu, C. Ng, N. Tan, B. Shen, A. Yin, Zhe Zheng","doi":"10.1109/ICSICT.2001.981465","DOIUrl":null,"url":null,"abstract":"Two different material plates used for a high density metal-insulator-metal (MIM) capacitor (1.0 fF//spl mu/m/sup 2/) top plate are studied. The two MIM capacitor process differences are compared. Their processes are very compatible with standard logic processes, and can be easily integrated into 0.35 /spl mu/m down to 0.18 /spl mu/m AlCu interconnection BEOL process. Both demonstrated good DC electrical parameter results. Their temperature, voltage coefficient and matching data fit meet the needs of most analog designers. A Q value >80 at 2.45 GHz was also achieved from the RF measurement.","PeriodicalId":349087,"journal":{"name":"2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT.2001.981465","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
Two different material plates used for a high density metal-insulator-metal (MIM) capacitor (1.0 fF//spl mu/m/sup 2/) top plate are studied. The two MIM capacitor process differences are compared. Their processes are very compatible with standard logic processes, and can be easily integrated into 0.35 /spl mu/m down to 0.18 /spl mu/m AlCu interconnection BEOL process. Both demonstrated good DC electrical parameter results. Their temperature, voltage coefficient and matching data fit meet the needs of most analog designers. A Q value >80 at 2.45 GHz was also achieved from the RF measurement.