A scaleable metal-insulator-metal capacitors process for 0.35 to 0.18 /spl mu/m analog and RFCMOS

Abstract

Two different material plates used for a high density metal-insulator-metal (MIM) capacitor (1.0 fF//spl mu/m/sup 2/) top plate are studied. The two MIM capacitor process differences are compared. Their processes are very compatible with standard logic processes, and can be easily integrated into 0.35 /spl mu/m down to 0.18 /spl mu/m AlCu interconnection BEOL process. Both demonstrated good DC electrical parameter results. Their temperature, voltage coefficient and matching data fit meet the needs of most analog designers. A Q value >80 at 2.45 GHz was also achieved from the RF measurement.