Experimental verification of the principle of operation of ring oscillators of Si complementary vertical dual carrier field effect transistors

Abstract

Theoretical studies of switching and analog performance of 0.6 volt 20 nm effective channel length Si ASIC of dual carrier field effect transistor and three dimensional field effect transistors will be presented. It will be shown that these field effect transistors can be fabricated by using mature semiconductor technology for linewidth greater than 130 nm.