Monolithically integrated optical random pulse generator in high voltage CMOS technology

Abstract

A monolithically integrated optoelectronic device is realized in 0.35um high voltage CMOS technology. It consists of a ring shaped single-photon avalanche diode (SPAD) around a Si-CMOS-LED to generate random events. The LED-emitted photons transmit through the short distance between the Si-LED and SPAD and some of them can be detected by the SPAD. In this device, time intervals between single-photon events are independent quantum random variables. Experimental results show an increase of more than a factor of three in the photon counting rate compared to earlier reported results.