Enhancing EUV mask blanks usability through smart shift and blank-design pairing optimization

R. Soni, Sankaranarayanan Paninjath, Mark Pereira, P. Buck, P. Thwaite
{"title":"Enhancing EUV mask blanks usability through smart shift and blank-design pairing optimization","authors":"R. Soni, Sankaranarayanan Paninjath, Mark Pereira, P. Buck, P. Thwaite","doi":"10.1117/12.2250106","DOIUrl":null,"url":null,"abstract":"EUV Defect avoidance techniques will play a vital role in extreme ultraviolet lithography (EUVL) photomask fabrication with the anticipation that defect free mask blanks won’t be available and that cost effective techniques will not be available for defect repairing. In addition, mask shops may not have a large inventory of expensive EUV mask blanks. Given these facts, defect avoidance can be used as cost effective technique to optimize the mask blank and design data (mask data) pair selection across mask blank manufacturers and mask shops so that overall mask blank utilization can be enhanced. In previous work, it was determined that the pattern shift based solution increases the chance that a defective mask blank can be used that would otherwise be discarded [1]. In pattern shift, design data is shifted such that defects are either moved to isolated regions or hidden under the patterns that are written. However pattern shifts techniques don’t perform well with masks with higher defect counts. Pattern shift techniques in this form assume all defects to be equally critical. In addition, a defect is critical or important only if it lands on the main pattern. A defect landing on fill, sub-resolution assist feature (SRAF) or fiducial areas may not be critical. In this paper we assess the performance of pattern shift techniques assuming defects that are not critical based upon size or type, as well as defects landing in non-critical areas (smart shift) can be ignored. In a production mask manufacturing environment it is necessary to co-optimize and prioritize blank-design pairing for multiple mask layouts in the queue with the available blanks. A blank-design pairing tool maximizes the utilization of blanks by finding the best pairing between blanks and design data so that the maximum number of mask blanks can be used. In this paper we also propose a novel process which would optimize the usage of costly EUV mask blanks across mask blank manufacturers and mask shops which write masks.","PeriodicalId":287066,"journal":{"name":"European Mask and Lithography Conference","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-10-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"European Mask and Lithography Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2250106","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

EUV Defect avoidance techniques will play a vital role in extreme ultraviolet lithography (EUVL) photomask fabrication with the anticipation that defect free mask blanks won’t be available and that cost effective techniques will not be available for defect repairing. In addition, mask shops may not have a large inventory of expensive EUV mask blanks. Given these facts, defect avoidance can be used as cost effective technique to optimize the mask blank and design data (mask data) pair selection across mask blank manufacturers and mask shops so that overall mask blank utilization can be enhanced. In previous work, it was determined that the pattern shift based solution increases the chance that a defective mask blank can be used that would otherwise be discarded [1]. In pattern shift, design data is shifted such that defects are either moved to isolated regions or hidden under the patterns that are written. However pattern shifts techniques don’t perform well with masks with higher defect counts. Pattern shift techniques in this form assume all defects to be equally critical. In addition, a defect is critical or important only if it lands on the main pattern. A defect landing on fill, sub-resolution assist feature (SRAF) or fiducial areas may not be critical. In this paper we assess the performance of pattern shift techniques assuming defects that are not critical based upon size or type, as well as defects landing in non-critical areas (smart shift) can be ignored. In a production mask manufacturing environment it is necessary to co-optimize and prioritize blank-design pairing for multiple mask layouts in the queue with the available blanks. A blank-design pairing tool maximizes the utilization of blanks by finding the best pairing between blanks and design data so that the maximum number of mask blanks can be used. In this paper we also propose a novel process which would optimize the usage of costly EUV mask blanks across mask blank manufacturers and mask shops which write masks.
通过智能移位和空白设计配对优化,增强EUV掩模空白的可用性
在极紫外光刻(EUVL)掩模制造中,缺陷避免技术将发挥至关重要的作用,因为预计无缺陷掩模毛片将无法获得,并且无法获得具有成本效益的缺陷修复技术。此外,口罩商店可能没有大量昂贵的EUV口罩毛坯库存。鉴于这些事实,缺陷避免可以作为一种经济有效的技术来优化掩模空白和设计数据(掩模数据)对在掩模空白制造商和掩模商店之间的选择,从而提高整体掩模空白利用率。在之前的工作中,确定基于模式移位的解决方案增加了使用有缺陷的掩模空白的机会,否则将被丢弃[1]。在模式转移中,设计数据的转移使得缺陷要么被转移到孤立的区域,要么被隐藏在所编写的模式之下。然而,模式转换技术在具有较高缺陷数的掩模上表现不佳。这种形式的模式转换技术假定所有的缺陷都是同等重要的。另外,只有当缺陷落在主模式上时,它才是关键的或重要的。缺陷降落在填充、亚分辨率辅助特征(SRAF)或基准区域可能不是关键的。在本文中,我们评估模式转移技术的性能,假设基于大小或类型的非关键性缺陷,以及降落在非关键区域的缺陷(智能转移)可以被忽略。在生产掩模制造环境中,有必要对队列中具有可用空白的多个掩模布局进行协同优化和优先级匹配。空白-设计配对工具通过寻找空白与设计数据之间的最佳配对,从而最大限度地利用空白,从而可以使用最多数量的掩模空白。在本文中,我们还提出了一种新的工艺,可以优化昂贵的EUV掩模坯在掩模坯制造商和掩模车间之间的使用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信