Investigation of reliability for C-doped InP/InGaAs/InP HBTs under high current density operation

Abstract

Abstrad In this paper, we demonstrated that with our proprietary device design and process technology, GCS’s InP HBTs show excellent reliability under high current density lifetests. Both Va. and emitter resistance are very stable during ISOkA/cm’ stressing, which indicates that the Cdoped InP HBT is potentially much more stable compared lo Be-doped InP HBT for high current density operation. No low activation energy (

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高电流密度下c掺杂InP/InGaAs/InP HBTs的可靠性研究

在本文中，我们证明了我们专有的器件设计和工艺技术，GCS的InP HBTs在高电流密度寿命试验中表现出优异的可靠性。在ISOkA/cm应力下，va电阻和发射极电阻都非常稳定，这表明掺杂的InP HBT在高电流密度下比低be掺杂的InP HBT稳定得多。未发现低活化能(< 0.sev)失效模式。提取的活化能大于0.97eV。在150kAicmz电流密度下，125°C下的MTTF估计超过300万小时。

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