Analytical models of effective DOS, saturation velocity and high-field mobility for SiGe HBTs numerical simulation

2010 International Conference on Simulation of Semiconductor Processes and Devices Pub Date : 2010-10-14 DOI:10.1109/SISPAD.2010.5604505

G. Sasso, N. Rinaldi, G. Matz, C. Jungemann

引用次数: 17

Abstract

Effective density of state, saturation velocity and high field mobility analytical models for hydrodynamic simulation of silicon-germanium hetero-junction bipolar transistors have been derived.

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SiGe HBTs数值模拟的有效DOS、饱和速度和高场迁移率分析模型

推导了硅锗异质结双极晶体管流体动力学模拟的有效态密度、饱和速度和高场迁移率分析模型。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2010 International Conference on Simulation of Semiconductor Processes and Devices

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