4kV 4H-SiC Epitaxial Emitter Bipolar Junction Transistors

Abstract

In this paper we present 4H-SiC BJTs with open-base blocking voltage (BVCEO) of 4000V (the upper limit for 4H-SiC BJT operation), specific on-resistance (Ron,sp)of 56 mOmega-cm 2, and common-emitter current gain beta ~ 9. These devices are designed with interdigitated base and emitter fingers with multiple emitter stripes. We assess the impact of design (emitter stripe width and contact spacing) on device performance and also examine the effect of emitter contact resistance on the device forward conduction characteristics