Vertical organic field-effect transistor array fabrication based on laser holography lithography process

Donghyun Kim, Yongtaek Hong
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引用次数: 1

Abstract

Due to the handiness in obtaining a short channel length, vertical organic field-effect transistors (VOFETs) have been pointed as an alternative form of conventional organic thin-film transistor (OTFT). With VOFET structure, it is relatively simple to obtain an short channel length and a large channel width-to-length ratio (W/L) value in a restricted device area, so a large current driving capability which can hardly be achieved with organic semiconductor, can be realized. Moreover, VOFETs can be utilized as a platform for many kinds of electrical applications associated with other various functional devices such as organic light-emitting diodes (OLEDs) and sensors.
基于激光全息光刻工艺的垂直有机场效应晶体管阵列制造
垂直有机场效应晶体管(vofet)由于易于获得短沟道长度,已被认为是传统有机薄膜晶体管(OTFT)的替代形式。利用VOFET结构,可以相对简单地在受限的器件面积内获得较短的通道长度和较大的通道宽长比(W/L)值,从而实现有机半导体难以实现的大电流驱动能力。此外,vofet可以用作与其他各种功能器件(如有机发光二极管(oled)和传感器)相关的多种电气应用的平台。
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