Defect cluster segmentation for CMOS fabricated wafers

W. J. Tee, M. Ooi, Y. Kuang, C. Chan
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引用次数: 7

Abstract

IC defects, which are essentially present in all fabricated wafers, can either be random defects or belonging to a group of systematic defects. The ability to segment systematic defects that are present in a wafer allows rapid root cause identification and corrective measures to be taken. In this paper, we have developed an algorithm based on the connected-components labeling to perform defect cluster segmentation. Dilation and erosion procedure is performed prior to the labeling process to eliminate isolated random defects in the wafer. A thresholding method which involves manual analysis by an industrial specialist is discussed. The advantage of this method is the ease and speed of implementation, and its robustness in allowing fine-tuning that suits the intended application.
CMOS晶圆的缺陷簇分割
集成电路缺陷基本上存在于所有晶圆中,可以是随机缺陷,也可以属于一组系统缺陷。对晶圆中存在的系统性缺陷进行分割的能力,允许快速识别根本原因并采取纠正措施。本文提出了一种基于连通构件标记的缺陷聚类分割算法。在贴标签之前进行膨胀和侵蚀程序,以消除晶圆片中孤立的随机缺陷。讨论了一种由工业专家手工分析的阈值法。这种方法的优点是实现的简单和速度,以及它在允许适合预期应用程序的微调方面的健壮性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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