Challenges of Low Effective-K approaches for future Cu interconnect

Abstract

Challenges of various Low Effective-K approaches, including homogeneous Low-K and Air-Gap, for next generation Cu/Low-K interconnect will be presented. For homogeneous Low-K approach, top issues and possible solutions for K damage, package, and CMP peeling & plannarization due to introduction of fragile lower k (K≪2.4) insulator will be focused. For Air-Gap, various types of Air-Gaps will be reviewed from the points of cost, layout/designer, and new processes involved.