InGaAsP/InP λ=1.3μm Channelled Substrate Buried Heterostructure Lasers with Vapor Phase Epitaxial Current Confinement Layers

Abstract

We have fabricated 13 μm InGaAsP/InP channelled substrate buried heterostructure lasers with vapor phase epitaxial (VPE) grown current confinement structures to increase throughput and reduce the cost of devices. The cross section of the device fabricated is indicated in Figure 1. Three layers of InP are grown by hydride transport VPE to form the npn base structure which is v-groove etched and regrown by liquid phase epitaxy.