SOI CMOS humidity sensor based on MWCNTs/MMA composite films. On the necessary verification of fabrication stages

Abstract

A humidity sensor, which is part of an air quality sensor system, based on MWCNTs/MMA composite doped with KOH has been studied. A standard SOI CMOS process, with only one post-processing step for the membrane etching, was used to fabricate the sensor presented. In order to have a homogeneous distribution of the CNTs in the solution, the tip sonication method was employed. The current voltage and resistance voltage characteristics have been investigated.