Temperature-dependent through-silicon via (TSV) model and noise coupling

Abstract

The effect of temperature variation on through silicon via (TSV) noise coupling is measured in this paper. The measurement result is analyzed using the temperature-dependent TSV lumped model and shows good correlation. Under the hundreds-of-MHz frequency range, increasing temperature reduces the noise suppression because the dielectric constant increases. However, over that frequency range, increasing temperature increases the noise suppression because the silicon substrate's resistivity increases.