A 2.8-to-5.8 GHz harmonic VCO in a 28 nm UTBB FD-SOI CMOS process

Luca Fanori, Ahmed Mahmoud, T. Mattsson, Peter Caputa, Sami Ramo, P. Andreani
{"title":"A 2.8-to-5.8 GHz harmonic VCO in a 28 nm UTBB FD-SOI CMOS process","authors":"Luca Fanori, Ahmed Mahmoud, T. Mattsson, Peter Caputa, Sami Ramo, P. Andreani","doi":"10.1109/RFIC.2015.7337738","DOIUrl":null,"url":null,"abstract":"A 2.8-to-5.8GHz VCO designed in a 28nm UTBB FD-SOI CMOS process adopts a reconfigurable active core to save power at the lower oscillation frequencies, and to enable a trade-off between power consumption and phase noise at all frequencies. The UTBB FD-SOI CMOS process is instrumental to achieve a tuning range in excess of one octave at low power consumption, while the use of an 8-shaped tank coil yields a VCO that is highly insensitive to external magnetic fields. The VCO operates from 0.9V and has a figure-of-merit of 186-189 dBc/Hz, depending on the oscillation frequency and the configuration of the oscillator core. The active area of the VCO is 380 μm × 700 μm.","PeriodicalId":121490,"journal":{"name":"2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"12 10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2015.7337738","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8

Abstract

A 2.8-to-5.8GHz VCO designed in a 28nm UTBB FD-SOI CMOS process adopts a reconfigurable active core to save power at the lower oscillation frequencies, and to enable a trade-off between power consumption and phase noise at all frequencies. The UTBB FD-SOI CMOS process is instrumental to achieve a tuning range in excess of one octave at low power consumption, while the use of an 8-shaped tank coil yields a VCO that is highly insensitive to external magnetic fields. The VCO operates from 0.9V and has a figure-of-merit of 186-189 dBc/Hz, depending on the oscillation frequency and the configuration of the oscillator core. The active area of the VCO is 380 μm × 700 μm.
28nm UTBB FD-SOI CMOS工艺中的2.8 ~ 5.8 GHz谐波压控振荡器
采用28nm UTBB FD-SOI CMOS工艺设计的2.8- 5.8 ghz压控振荡器采用可重构有源内核,在较低振荡频率下节省功耗,并在所有频率下实现功耗和相位噪声之间的权衡。UTBB FD-SOI CMOS工艺有助于在低功耗下实现超过一个倍频程的调谐范围,而使用8形槽线圈产生对外部磁场高度不敏感的压控振荡器。VCO的工作电压为0.9V,性能因数为186-189 dBc/Hz,具体取决于振荡频率和振荡器核心的配置。VCO的有效面积为380 μm × 700 μm。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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