ROLE OF SODIUM CHANNELS IN THE DEVELOPMENT OF OXIDATIVE STRESS IN ISCHEMIA/REPERFUSION MODEL

E. Yurova, E. Pogodina, E. Rastorgueva, E. Beloborodov, D. Sugak, A. N. Fomin, Y. Saenko
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Abstract

Ischemic and reperfusion injury is a critical condition, as it is necessary to control cell death and maintain tissue function. Restoration of nutrient and oxygen flow causes secondary damage to ischemic cells and is called reperfusion injury. Reperfusion injury causes, on the one hand, fluctuations in ion concentration inside cells, in particular sodium ions, due to changes in the conductivity of voltage-dependent ion channels, and, on the other hand, activation of the antioxidant system as a response to oxidative stress, in which the key role is given to reactive oxygen species and nitric oxide. Thus, the effect of ion channel inhibitors on the progression of oxidative stress, apoptosis and necrosis during reperfusion is of particular interest. The aim of the study is to examine the impact of sodium channels on oxidative stress under ischemic and reperfusion injury and sodium channel blockers action. Materials and Methods. The authors studied the influence of the synthesized peptide toxin, an inhibitor of voltage-gated sodium channels, under modelled ischemia/reperfusion in CHO-K1 culture on the level of apoptosis, necrosis, and oxidative stress (concentration of reactive oxygen species, nitric oxide, and glutathione) using fluorescent dyes and fluorescence microplate reader. Results. Data obtained indicate a decreased level of apoptosis and necrosis, and a control level of nitric oxide under toxin at a nanomolar concentration. At the same time, the concentrations of reactive oxygen species and glutathione did not change. Thus, the inhibitor toxin acted as a protective agent by preventing a decrease in the nitric oxide concentration, which favorably affected the survival of the cell culture during reperfusion after ischemia.
钠通道在缺血/再灌注模型氧化应激发展中的作用
缺血和再灌注损伤是控制细胞死亡和维持组织功能的必要条件。营养和氧流的恢复对缺血细胞造成继发性损伤,称为再灌注损伤。再灌注损伤一方面引起细胞内离子浓度的波动,特别是钠离子,这是由于电压依赖性离子通道电导率的变化,另一方面,作为对氧化应激的反应,抗氧化系统被激活,其中活性氧和一氧化氮起着关键作用。因此,离子通道抑制剂对再灌注过程中氧化应激、细胞凋亡和坏死进展的影响是人们特别感兴趣的。本研究旨在探讨缺血和再灌注损伤时钠通道对氧化应激的影响及钠通道阻滞剂的作用。材料与方法。作者利用荧光染料和荧光微孔板阅读器研究了CHO-K1培养模型缺血/再灌注下合成肽毒素(电压门控钠通道抑制剂)对细胞凋亡、坏死和氧化应激(活性氧、一氧化氮和谷胱甘肽浓度)水平的影响。结果。获得的数据表明,在纳摩尔浓度的毒素作用下,细胞凋亡和坏死水平降低,一氧化氮控制水平。同时,活性氧和谷胱甘肽的浓度没有变化。因此,抑制剂毒素作为一种保护剂,通过阻止一氧化氮浓度的下降,有利于影响缺血后再灌注时培养细胞的存活。
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