Stability Analysis of Parallel SiC power MOSFETs based on a Virtual Prototype

Abstract

This paper presents a novel modeling approach for assessing the stability of SiC power MOSFETs connected in parallel considering the voltage-dependent MOSFET C-V and I-V characteristics, as well as the frequency-dependent PCB layout parasitics. It is shown that the switching circuit is time-variant and hence, has to be analyzed both in the time-and frequency-domain to have a complete understanding of the (un)stable oscillations. Such a two-domain analysis can be beneficial for designing optimized circuits with parallel SiC power MOSFETs.