Enhanced short-circuit withstanding capability of the emitter switched thyristor (EST) by employing a new protection circuit

B. Jeon, I. Ji, Soo-Seong Kim, Seung-Chul Lee, Yearn-Ik Choi, M. Han
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引用次数: 2

Abstract

A new protection circuit, which improves the short-circuit withstanding capability of an emitter switched thyristor (EST) is proposed and fabricated. Experimental results show that the EST employing the protection circuit exhibits a high voltage current saturation when the protection circuit reduces the gate voltage. We have also investigated the mechanism by employing two-dimensional simulation.
采用一种新的保护电路,提高了发射极开关晶闸管的抗短路能力
提出并制作了一种新的保护电路,提高了发射极开关晶闸管(EST)的抗短路能力。实验结果表明,当保护电路降低栅极电压时,采用该保护电路的EST表现出高电压电流饱和。我们还通过二维模拟研究了其机理。
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