B. Jeon, I. Ji, Soo-Seong Kim, Seung-Chul Lee, Yearn-Ik Choi, M. Han
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引用次数: 2
Abstract
A new protection circuit, which improves the short-circuit withstanding capability of an emitter switched thyristor (EST) is proposed and fabricated. Experimental results show that the EST employing the protection circuit exhibits a high voltage current saturation when the protection circuit reduces the gate voltage. We have also investigated the mechanism by employing two-dimensional simulation.