Condition Monitoring of IGBT Module Based on Peak Rise Rate Appearance Time of Case Temperature during the Start-up Process of Converter

Abstract

In this paper, we proposed a new method to monitor the IGBT thermal path degradation of IGBT module using the peak rise rate appearance time of case temperature right below the center of the chip during the start-up process of converter. The correlation between the peak rise rate appearance time and 3rd-order Cauer thermal parameters is analyzed. Results show that the degradation of IGBT module can be monitored by detecting the peak rise rate appearance time. Simulation and experimental tests are performed to verify the effectiveness of the proposed method.