{"title":"Effect of Asymmetric Space Charge Region on Current Densityof Heterojunction Solar Cell","authors":"Sayoni Chakraborty, A. Deyasi","doi":"10.1109/VLSIDCS53788.2022.9811453","DOIUrl":null,"url":null,"abstract":"Current density of single heterojunction solar cell is analytically investigated for different space charge distribution widths by considering Gaussian profile of diffusion length. Taking realistic dependence of minority carrier distribution on material layers and diffusion widths, asymmetric variations of space-charge regions are investigated for current density w.r.t conventional symmetric configurations. Effect of internal inherent scattering mechanisms is incorporated by assuming loss factors, manifested in the formulation by taking less no of carriers at the destination under external bias. For optimum configuration, carrier concentration is also evaluated. Results are important for computing efficiency of the device.","PeriodicalId":307414,"journal":{"name":"2022 IEEE VLSI Device Circuit and System (VLSI DCS)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE VLSI Device Circuit and System (VLSI DCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIDCS53788.2022.9811453","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Current density of single heterojunction solar cell is analytically investigated for different space charge distribution widths by considering Gaussian profile of diffusion length. Taking realistic dependence of minority carrier distribution on material layers and diffusion widths, asymmetric variations of space-charge regions are investigated for current density w.r.t conventional symmetric configurations. Effect of internal inherent scattering mechanisms is incorporated by assuming loss factors, manifested in the formulation by taking less no of carriers at the destination under external bias. For optimum configuration, carrier concentration is also evaluated. Results are important for computing efficiency of the device.