S. D. Toso, A. Bevilacqua, M. Tiebout, N. D. Dalt, A. Gerosa, A. Neviani
{"title":"A 0.059-mm2 10.8-mW local oscillator for GSM systems in 65-nm CMOS","authors":"S. D. Toso, A. Bevilacqua, M. Tiebout, N. D. Dalt, A. Gerosa, A. Neviani","doi":"10.1109/ESSCIRC.2009.5326029","DOIUrl":null,"url":null,"abstract":"A GSM-compliant local oscillator consuming a tiny die area of only 0.059 mm2 and drawing 9 mA from a 1.2 V supply has been designed in a 65-nm CMOS process using thin-oxide devices only. The system is made of a 13 to 15 GHz LC VCO followed by a divide-by-four injection-locked frequency divider. The divider employs a ring oscillator-based topology leading to a two octave locking range with limited area and power consumption. The phase noise at the output of the system is less than −133 dBc/Hz at 3 MHz offset over the tuning range.","PeriodicalId":258889,"journal":{"name":"2009 Proceedings of ESSCIRC","volume":"6 7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 Proceedings of ESSCIRC","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC.2009.5326029","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A GSM-compliant local oscillator consuming a tiny die area of only 0.059 mm2 and drawing 9 mA from a 1.2 V supply has been designed in a 65-nm CMOS process using thin-oxide devices only. The system is made of a 13 to 15 GHz LC VCO followed by a divide-by-four injection-locked frequency divider. The divider employs a ring oscillator-based topology leading to a two octave locking range with limited area and power consumption. The phase noise at the output of the system is less than −133 dBc/Hz at 3 MHz offset over the tuning range.