Neuronal spike event generation by memristors

Abstract

New memristors-based neuronal spike event generator is introduced. By using the dynamic properties of conditional resistance switching of a practical bistable memristive device, the neuronal action potential is generated describing both the integrate-and-fire spiking events and the long enough refractory period of nerve membrane cells. The memristor offers the dual time-constants which model the unbalanced charging and discharging periods of the spike signals. With a Pt/TiO2/Pt memristive device having the ROFF/RON resistance ratio of 3000, the memristor-based spike generator offers spike trains with about 0.03% duty.