Role of Silica-Epoxy Interface and Deep Traps on the Dielectric Breakdown Performance of Epoxy Moulding Compounds (EMC)

L. Chua, Hui Qin Woo, Khai Seen Yong, Wu-Hu Li, L. P. Tan, C. Gan
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Abstract

In this paper, the properties of silica-epoxy interface and effect of deep traps on the dielectric breakdown performance of Epoxy Moulding Compounds (EMC) were investigated to address the lack of understanding on how the higher voltages and frequencies, affect the encapsulation material of the devices. The interfacial properties, trap properties and dielectric breakdown strength of EMC formulations modified by a type of coupling agent, named AS, were studied. This paper found that the improvement in filler dispersion (i.e. a reduction of filler aggregation rate and an improvement of filler size distribution) and the increase in deep trap depth and density could improve the AC dielectric breakdown strength. The changes in the silica-epoxy interface via the addition of AS can be explained using the Maxwell-Wagner-Sillars (MWS) polarisation mechanism. EMC with 100% AS-treated silica was found to have the best dielectric breakdown performance due to its high dielectric breakdown strength of $21.41\pm 0.20\ \text{kV}/\text{mm}$ measured.
二氧化硅-环氧界面和深阱对环氧模塑材料介电击穿性能的影响
本文研究了硅树脂-环氧树脂界面的特性以及深阱对环氧树脂模压化合物(EMC)介电击穿性能的影响,以解决人们对高电压和高频率如何影响器件封装材料的认识不足的问题。研究了一种名为AS的偶联剂修饰的电磁兼容配方的界面特性、陷阱特性和介电击穿强度。研究发现,填料分散性的改善(即填料聚集率的降低和填料粒径分布的改善)和深阱深度和密度的增加可以提高交流介质击穿强度。通过添加AS,硅-环氧界面的变化可以用麦克斯韦-瓦格纳-西拉(MWS)极化机制来解释。经100%砷化硅处理的电磁兼容具有最佳的介电击穿性能,其介电击穿强度高达21.41\pm 0.20\ \text{kV}/\text{mm}$。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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