A 400-MHz CMOS radio front-end for ultra low-power medical implantable applications

F. Carrara, A. Italia, G. Palmisano, R. Guerra
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引用次数: 11

Abstract

A 400-MHz ultra low-power radio front-end for medical implantable applications has been implemented in a 0.13-µm CMOS technology. The circuit consists of an up-converter, a down-converter, and a LO frequency synthesizer. The up-converter employs a push-pull PA, which achieves a saturated output power of 0 dBm with a maximum power added efficiency of 32%. Moreover, the up-converter exhibits a −30-dBc ACPR at an output power of −0.5 dBm with a 200 kbit/s GFSK input signal. The down-converter provides excellent linearity performance exhibiting an output compression point of 1.13 Vpp, an IIP3 of −23 dBm, and an IIP2 of 8.7 dBm despite a current consumption as low as 1.5 mA. It has a 45-dB conversion gain and a 7.4-dB noise figure. The LO frequency synthesizer features a fully-integrated LC VCO and programmable channel steps. It provides a phase noise better than −96 dBc/Hz at 100-kHz offset and a spur rejection of −52 dBc. Operating from a 1.2-V supply, the overall front-end draws 3 mA in receive mode and 4.5 mA in transmit mode.
一个400-MHz CMOS无线电前端超低功耗医疗植入式应用
采用0.13 μ m CMOS技术实现了用于医疗植入式应用的400-MHz超低功耗射频前端。该电路由一个上变频器、一个下变频器和一个LO频率合成器组成。上变频器采用推挽式PA,饱和输出功率为0 dBm,最大功率增加效率为32%。此外,在输出功率为- 0.5 dBm,输入信号为200kbit /s的GFSK时,上变频器的ACPR为- 30 dbc。下变频器提供了出色的线性性能,输出压缩点为1.13 Vpp, IIP3为−23 dBm, IIP2为8.7 dBm,尽管电流消耗低至1.5 mA。它具有45 db转换增益和7.4 db噪声系数。LO频率合成器具有完全集成的LC VCO和可编程通道步进。在100 khz偏置时,相位噪声优于- 96 dBc/Hz,杂散抑制为- 52 dBc。从1.2 v电源工作,整体前端在接收模式下消耗3 mA,在发送模式下消耗4.5 mA。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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