D. Marian, D. Soriano, E. G. Marín, G. Iannaccone, G. Fiori
{"title":"Electric-field controlled spin transport in bilayer CrI3","authors":"D. Marian, D. Soriano, E. G. Marín, G. Iannaccone, G. Fiori","doi":"10.1109/ESSCIRC53450.2021.9567800","DOIUrl":null,"url":null,"abstract":"We explore charge and spin transport properties of bilayer CrI3 controlled by an external electric field. To this aim, we focus on two different device structures, namely ML-source/BL-channel/ML-drain CrI3 and BL-source/BL-channel/BL-drain CrI3, where ML and BL stand for monolayer and bilayer crystals respectively. The electric field is only applied to the central BL-channel of the structure. In the first device, we inject only a single spin from the ferromagnetic ML CrI3 which allows us to study the effect of the electric field in the spin transport properties, i.e. the operation of a spin transistor. The second structure is based on the injection of both spins, that are later filtered by electrically mediated spin-splitting effects, resulting in spin-filter device.","PeriodicalId":129785,"journal":{"name":"ESSCIRC 2021 - IEEE 47th European Solid State Circuits Conference (ESSCIRC)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSCIRC 2021 - IEEE 47th European Solid State Circuits Conference (ESSCIRC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC53450.2021.9567800","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We explore charge and spin transport properties of bilayer CrI3 controlled by an external electric field. To this aim, we focus on two different device structures, namely ML-source/BL-channel/ML-drain CrI3 and BL-source/BL-channel/BL-drain CrI3, where ML and BL stand for monolayer and bilayer crystals respectively. The electric field is only applied to the central BL-channel of the structure. In the first device, we inject only a single spin from the ferromagnetic ML CrI3 which allows us to study the effect of the electric field in the spin transport properties, i.e. the operation of a spin transistor. The second structure is based on the injection of both spins, that are later filtered by electrically mediated spin-splitting effects, resulting in spin-filter device.