Worst-Case Performance Analysis Under Random Telegraph Noise Induced Threshold Voltage Variability

Abstract

RTN induced threshold voltage distribution has a long tail that can degrade the worst-case distribution severely. In this paper, we analyze the effect of RTN on worst-case performance based on variability models extracted from a 65 nm silicon-on-thin-body low threshold voltage process. Monte Carlo based simulation results reveal that with the lowering of supply voltage, RTN can degrade the worst-case delay by more than 10 % when the number of critical paths is 10. The worst-case delay degradation can go as high as 100 % if the critical path number increases to 100. Because of the RTN induced threshold voltage fluctuation, several outliers appear at near/sub-threshold operation. Considering RTN amplitude can increase at weak-inversion operation, low-voltage operation needs careful consideration of RTN.