Highly Reliable Non-Volatile Logic Circuit Technology and Its Application

H. Kimura, Zhiyong Zhong, Y. Mizuochi, N. Kinouchi, Yoshinobu Ichida, Y. Fujimori
{"title":"Highly Reliable Non-Volatile Logic Circuit Technology and Its Application","authors":"H. Kimura, Zhiyong Zhong, Y. Mizuochi, N. Kinouchi, Yoshinobu Ichida, Y. Fujimori","doi":"10.1109/ISMVL.2013.32","DOIUrl":null,"url":null,"abstract":"A ferroelectric-based (FE-based) non-volatile logic is proposed for low-power LSI. Standby currents in a logic circuit can be cut off by using FE-based non-volatile flip-flops(NVFFs), and the standby power can be reduced to zero. The FE capacitor is accessed only when the power turns on/off, performance of the NVFF is almost as same as that of the conventional flip-flop in a logic operation. The use of complementarily stored data in coupled FE capacitors makes it possible to realize wide read voltage margin, which guarantees 10 years retention at 85 degree Celsius under less than 1.5V operation. The low supply voltage and electro-static discharge (ESD) detection technique prevents data destruction caused by illegal access for the FE capacitor during standby state. Applying the proposed circuitry in CPU, the write and read operation for all FE capacitors in 1.6k-bit NVFFs are performed within 7us and 3us with access energy of 23.1nJ and 8.1nJ, respectively, using 130nm CMOS with Pb(Zr, Ti)O3(PZT) thin films.","PeriodicalId":124947,"journal":{"name":"2013 IEEE 43rd International Symposium on Multiple-Valued Logic","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE 43rd International Symposium on Multiple-Valued Logic","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISMVL.2013.32","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 16

Abstract

A ferroelectric-based (FE-based) non-volatile logic is proposed for low-power LSI. Standby currents in a logic circuit can be cut off by using FE-based non-volatile flip-flops(NVFFs), and the standby power can be reduced to zero. The FE capacitor is accessed only when the power turns on/off, performance of the NVFF is almost as same as that of the conventional flip-flop in a logic operation. The use of complementarily stored data in coupled FE capacitors makes it possible to realize wide read voltage margin, which guarantees 10 years retention at 85 degree Celsius under less than 1.5V operation. The low supply voltage and electro-static discharge (ESD) detection technique prevents data destruction caused by illegal access for the FE capacitor during standby state. Applying the proposed circuitry in CPU, the write and read operation for all FE capacitors in 1.6k-bit NVFFs are performed within 7us and 3us with access energy of 23.1nJ and 8.1nJ, respectively, using 130nm CMOS with Pb(Zr, Ti)O3(PZT) thin films.
高可靠非易失性逻辑电路技术及其应用
提出了一种用于低功耗大规模集成电路的铁电非易失性逻辑。利用基于fe的非易失性触发器(nvff)可以切断逻辑电路中的待机电流,并将待机功率降至零。只有在电源开/关时才能访问FE电容,NVFF的性能几乎与逻辑运算中的传统触发器相同。在耦合FE电容器中使用互补存储的数据,可以实现宽读取电压裕度,保证在低于1.5V的工作条件下在85摄氏度下保持10年。低电源电压和ESD (electrostatic discharge)检测技术,防止在待机状态下FE电容被非法访问而破坏数据。将所提出的电路应用于CPU,采用Pb(Zr, Ti)O3(PZT)薄膜的130nm CMOS,在7us和3us内完成了1.6k-bit NVFFs中所有FE电容的写入和读取操作,存取能量分别为23.1nJ和8.1nJ。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信
小红书